Accession Number:

ADA591754

Title:

Effect of an in situ Hydrogen Plasma Pre-treatment on the Reduction of GaSb Native oxides Prior to Atomic Layer Deposition

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV

Report Date:

2013-04-12

Pagination or Media Count:

10.0

Abstract:

The influence of an in situ hydrogen plasma pre-treatment on the modification of native oxides of GaSb surfaces prior to atomic layer deposition ALD is presented. The effects of varying rf-plasma power, exposure time, and substrate temperature have been characterized by atomic force microscopy AFM, ex situ X-ray photoelectron spectroscopy XPS, as well as capacitance voltage C V measurements on fabricated devices. Results indicate that a completely oxide free surface may not be necessary to produce a good electrical interface with a subsequent ALD Al2O3 dielectric the most effective hydrogen plasma treatments resulted in the absence of Sb-oxides, a reduction in elemental Sb, and an increase in the Ga2O3 content at the interface. The use of an in situ hydrogen plasma pre-treatment eliminates the need for wet chemical etches and may also be relevant to the deposition of other high-k dielectrics, making it a promising technique for realizing high performance Sb-based MOS-devices. 2013 Elsevier

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Plasma Physics and Magnetohydrodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE