Effect of Interface States on the Performance of Antimonide nMOSFETs
NAVAL RESEARCH LAB WASHINGTON DC
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Antimonide Sb quantum-well MOSFETs are demonstrated with an integrated high- dielectric 1-nm Al2O310-nm HfO2. The effect of interface trap density Dit on the dc drive current and transconductance gm is studied in detail using split C-VG-V , pulsed I-V , and radio-frequency measurements. Pulsed I-V measurements show improved ON current, transconductance, and subthreshold slope due to reduced charge trapping in the dielectric at high frequencies. The long-channel Sb nMOSFET exhibits effective electron mobility of 6000 cm2V s at high field 2 x 10expn 12cmexpn 2 of charge density Nsub s, which is 15 x higher than Si NMOS inversion layer mobility, and one of the highest values reported for III-V MOSFETs. The short-channel Sb nMOSFET Lsub G 150 nm exhibits a cutoff frequency fr of 120 GHz, an fr Lsub G product of 18 GHz . micro m, and a source-side injection velocity v sub eff of 2.7 x 10expn 7 cms at a drain bias VDS of 0.75 V and a gate overdrive of 0.6 V.
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems
- Quantum Theory and Relativity