Accession Number:

ADA591545

Title:

Strained InGaAs/InAlAs Quantum Wells for Complementary III-V Transistors

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV

Report Date:

2014-01-01

Pagination or Media Count:

7.0

Abstract:

Quantum wells of InGaAs clad by InAlAs were grown on AlGaAsSb buffer layers by molecular beam epitaxy. The buffer layer lattice parameters were near 6.0 , yielding tensile strains up to 2 in the InGaAs and InAlAs. Room-temperature electron mobilities of 9000-11,000 cm2V s were achieved. Field-effect transistors FETs were fabricated and exhibited good DC and RF characteristics. Previous work demonstrated compressively-strained GaSb quantum wells on similar buffer layers with high hole mobilities and good transistor performance. Hence, a single buffer layer of AlGaAsSb should be suitable for complementary circuits comprised of n-channel FETs based on the mature InGaAsInAlAs technology and p-channel FETs based on high-mobility antimonides.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Quantum Theory and Relativity
  • Mechanics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE