Accession Number:

ADA591544

Title:

Efficient Incorporation of Mg in Solution Grown GaN Crystals

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2013-10-11

Pagination or Media Count:

5.0

Abstract:

Detailed spectrometry and optical spectroscopy studies carried out on GaN crystals grown in solution detect and identify Mg as the dominant shallow acceptor. Selective etching of crystals with higher Mg levels than that of the donor concentration background indicates that Mg acceptors incorporate preferentially in the N-polar face. Electrical transport measurements verified an efficient incorporation and activation of the Mg acceptors. These results suggest that this growth method has the potential to produce p-type doped epitaxial layers or p-type substrates characterized by high hole concentration and low defect density.

Subject Categories:

  • Inorganic Chemistry
  • Metallurgy and Metallography
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE