Low Resistance, Unannealed, Ohmic Contacts to p-type In0.27Ga0.73Sb
NAVAL RESEARCH LAB WASHINGTON DC
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Unannealed PdPtAu contacts to p-type In0.27Ga0.73Sb were fabricated and measured. Relatively high hole mobilities, with respect to similarly doped InP-lattice-matched materials, and associated low sheet resistances were measured for the p-type In0.27Ga0.73Sb material. The unannealed PdPtAu contacts were found to be Ohmic in nature and for a hole density of 2.9 x 10to the 19th power cm-3 and a mobility of 160 cm2 V s, a specific contact resistance of 7.6 x 10to the -8 power Ohms cm2 was measured.
- Solid State Physics