Strain-Balanced InAs/InAs1-xSbx Type-II Superlattices Grown by Molecular Beam Epitaxy on GaSb Substrates
AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH MATERIALS AND MANUFACTURING DIRECTORATE
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Strain-balanced InAsInAssub 1-xSbsub x type-II superlattices SLs on GaSb substrates with 0.27 x 0.33 were grown by molecular beam epitaxy and demonstrated photoluminescence PL up to 11.1 micro m. The calculated SL bandgap energies agree with the PL peaks to within 5 meV for long-wavelength infrared samples 9.5, 9.9, and 11.1 micro m and to within 9meV for a mid-wavelength infrared sample 5.9 micro m. X-ray diffraction measurements reveal average SL mismatches of less than 0.2, and the PL full-width-at-half-maximums increase with the mismatch, confirming the importance of strain-balancing for material quality.
- Inorganic Chemistry