Accession Number:

ADA589658

Title:

Q-Band (45 GHz) Microwave Integrated Circuit Power Amplifier Designs Submitted to TriQuint Semiconductor for Fabrication with 0.15-micron High-Electron-Mobility Transistors (HEMT) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

Descriptive Note:

Final rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Personal Author(s):

Report Date:

2013-09-01

Pagination or Media Count:

14.0

Abstract:

Compact hand-held satellite communications SATCOM systems are important for instant, secure data, and voice links in remote global regions. Small efficient electronic components are needed for these, often battery powered, communications systems, particularly the power amplifier PA circuit in the transmitter. Gallium nitride GaN integrated circuits enable improvements in power efficiencies, transmit powers, and higher bandwidths for state-of-the-art radio frequency RF electronics and devices. The U.S. Army Research Laboratory ARL has been working with TriQuint Semiconductor, Inc. TQS for fabrication under a recent cooperative research and development agreement CRADA between ARL and TQS to develop efficient high-power amplifiers for SATCOM applications. Several Q-band amplifier designs were submitted for fabrication in a TQS pre-released 0.15- m GaN on the 2-mil silicon carbide SiC process. This technical note gives a brief overview of the designs submitted for fabrication which that will be followed by a more thorough technical report on the design details of those PAs.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Radio Communications

Distribution Statement:

APPROVED FOR PUBLIC RELEASE