Three-Level Inverter with 60 A, 4.5 kV Si IGBT/SiC JBS Power Modules for Marine Applications
NAVAL RESEARCH LAB WASHINGTON DC ELECTRONICS SCIENCE AND TECHNOLOGY DIV
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Semiconductor modules with medium-voltage MV Si IGBTs and anti-parallel silicon-carbide SiC junction-barrier Schottky JBS diodes are of interest in commercial and naval converters as they allow for significantly reduced switching losses and at present are more cost-effective than an all-SiC switch. A three-level converter is being built and tested using custom modules made with 60A 120A pulsed, 4.5kV Si IGBTs and SiC JBS diodes. This work provides a platform to de-risk and evaluate the integration of SiC JBS diodes at MV using commercial modulation strategies and gating electronics with standard industry topologies for a range of switching frequencies. A comparison of SiC JBS diodes for MV, such as the decrease in turn-on IGBT losses and the elimination of snappy or avalanche recoveries is reviewed, and ways to make SiC more cost effective via topology and packaging choices are discussed.
- Electrical and Electronic Equipment
- Marine Engineering