Accession Number:

ADA588379

Title:

Integrated Photonic Circuit Fabrication for Enabling RF Emitter Array

Descriptive Note:

Interim rept. 27 Aug 2012-31 Aug 2013

Corporate Author:

LOUISVILLE UNIV KY

Report Date:

2013-09-01

Pagination or Media Count:

23.0

Abstract:

The interim report describes an initial effort to fabricate an Integrated Photonic Circuit IPC which provides a means for converting an optical laser signal, that consists of both a narrow-line carrier wavelength and a heterodyned RF signal that are in-phase, to an electrical RF signal that can drive various on-chip components such as an antenna. The IPC would supply a critical missing element for enabling new phased-array radar based on an all-optical architecture. Ge-on-Si technology, the focus of the effort, has specific advantages that are fundamental to nearly all integrated photonic circuits. Its direct energy bandgap, slightly larger than Ge s indirect bandgap, permits band-to-band recombinationgeneration at an energy that corresponds to light near the standard optical communications wavelength. Ge-on-Si technology, therefore, could enable a host of IPC subcomponents including photodetectors, laser diodes, and enhanced silicon modulators. In addition, such germanium devices can be simply and inexpensively incorporated into a silicon manufacturing process.

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Fiber Optics and Integrated Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE