Accession Number:

ADA585855

Title:

Improved Performance of Silicon Carbide Detector Using Double Layer Anti Reflection (AR) Coating

Descriptive Note:

Final rept. 10 Oct 2012-1 Jul 2013

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Report Date:

2013-08-01

Pagination or Media Count:

14.0

Abstract:

Avalanche photodiodes fabricated on a silicon carbide SiC substrate showed peak responsivity near 280 nm. The SiC detector structure is grown epitaxially on a 2- m-thick n-type bottom contact layer followed by a 0.48- m lightly doped multiplication layer and a top heavily doped 0.45- m p-type contact layer. Double-layer anti-reflection AR coating is grown by a plasma enhanced chemical vapor deposition PECVD technique at 250 C. Using a double-layer AR coating with a bottom silicon nitride Si3N4 layer and a top silicon dioxide SiO2 layer broadly enhanced responsivity in the full detector spectral range. We observed that the enhancement of the detector responsivity by using double-layer AR coating is higher than the enhancement observed in a similar device with a single-layer AR coating with a SiO2 film. We observed about 28 increases in detector responsivity by using a double-layer AR coating.

Subject Categories:

  • Ceramics, Refractories and Glass
  • Coatings, Colorants and Finishes

Distribution Statement:

APPROVED FOR PUBLIC RELEASE