Contactless Microwave Measurements of Photoconductivity in Silicon Hyperdoped with Chalcogens
RENSSELAER POLYTECHNIC INST TROY NY
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Photoconductivity in silicon hyperdoped with sulfur and selenium above the insulator-to-metal transition was measured via photoinduced changes in the microwave reflectivity of hyperdoped layers formed on p-type silicon. Despite these materials strong subgap optical absorption, exposing them to 1310 and 1550nm light results in a change in conductivity per photon 10,000 times smaller than what is observed in untreated silicon exposed to 980nm light. A similar bound applies for 405nm light, which is absorbed entirely in the hyperdoped layer. We use these results to deduce that the photocarrier lifetime in the hyperdoped material is or 100 ns.
- Solid State Physics