MWIR Lasers Using Type II Quantum Well Active Regions on InP Substrates
Final rept. 6 Jan 2011-29 Feb 2012
PRINCETON LIGHTWAVE INC CRANBURY NJ
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For this STTR program, we developed modeling for a Type II Quantum WellQW-based 2.4-4 microns laser grown on InP substrates that use a unique quantum well design and demonstrated concept feasibility through experimental photoluminescence measurements. The QW design is based on using InGaAs and GaAsSb heterostructures with Type II electronic transitions. This technology enables the potential to manufacture lasers in a broad spectrum, from 2.4-4 microns using Princeton Lightwave Inc s established laser production platform. Our novel quantum well design enhances electron and hole wave-function overlapping, reaching the highest possible material gain. During Phase I of the program, we developed detailed modeling of Type II QW electronic transitions describing optical and gain characteristics using InGaAs and GaAsSb composition layers and demonstrated the concept feasibility through photoluminescence measurements.
- Lasers and Masers
- Quantum Theory and Relativity
- Solid State Physics