Accession Number:

ADA582638

Title:

Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT

Descriptive Note:

Final rept. 1 Oct 2009-30 Sep 2012

Corporate Author:

GEORGIA INST OF TECH ATLANTA

Personal Author(s):

• Doolittle, William A.

Report Date:

2012-11-20

Pagination or Media Count:

36.0

Abstract:

The group-III nitride materials system has been meticulously investigated since the late 1980s for its applications in electronic and optoelectronic devices. These materials have a direct bandgaps that are tunable from 0.7 eV InN to 6.2 eV AlN by forming alloys of the different III-nitride binaries. This bandgap range covers the entire visible spectrum, and some useful regions of ultraviolet and infrared light. In the case of light emission, this materials system boasts an enormous array of applications including indicators, lasers, solid state illumination, and water purificationsterilization among others. Group-III nitrides also have a very strong resistance to radiation damage, providing applications in space, as well.

Descriptors:

• *NITRIDES
• ALLOYS
• BAND GAPS
• DEFECTS(MATERIALS)
• DOPING
• ELECTRONIC EQUIPMENT
• LASERS
• OPTOELECTRONICS
• RADIATION DAMAGE
• STERILIZATION

Subject Categories:

• Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE