Accession Number:

ADA582485

Title:

3 Micrometers Diode Lasers Grown on (Al) GaInSb Compositionally Graded Metamorphic Buffer Layers

Descriptive Note:

Journal article

Corporate Author:

STATE UNIV OF NEW YORK AT STONY BROOK RESEARCH FOUNDATION

Personal Author(s):

• Hosoda, T.
• Wang, D.
• Kipshidze, G.
• Sarney, W. L.
• Shterengas, L.

Report Date:

2012-01-01

Pagination or Media Count:

11.0

Abstract:

Diode lasers operating at 3 mu m in continuous wave mode at room temperature were fabricated using metamorphic molecular beam epitaxy. The laser heterostructures have a lattice constant 1.3-1.6 bigger than that of the GaSb substrates. The mismatch between the epi-structure and the substrate lattice constants was accommodated by a network of misfit dislocations confined within linearly compositionally graded buffer layers. Two types of the buffers were tested-GaInSb and AlGaInSb. The laser heterostructures with Al-containing buffer layers demonstrated better surface morphology and produced devices with lower threshold and higher efficiency. At the same time the use of Al-containing buffers caused an excessive voltage drop across the laser heterostructure. Thus, a maximum continuous wave output power of 200 mW was obtained from lasers grown on GaInSb buffers, while only 170 mW was obtained from those grown on AlGaInSb buffers.

Descriptors:

• *DIODE LASERS
• *METAMORPHIC GEOLOGY
• BUFFERS
• CRYSTAL LATTICES
• DISLOCATIONS
• EFFICIENCY
• HETEROGENEITY
• MOLECULAR BEAM EPITAXY
• MORPHOLOGY
• PARAMETERS
• SEMICONDUCTORS
• SURFACE PROPERTIES
• TEMPERATURE
• THRESHOLD EFFECTS

Subject Categories:

• Geology, Geochemistry and Mineralogy
• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE