Electronic Characteristics of Rare Earth Doped GaN Schottky Diodes
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH GRADUATE SCHOOL OF ENGINEERING AND MANAGEMENT
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The Schottky barrier height SBH was measured on GaN based diodes with three different dopant types Gd, Er and Yb. Two methods were used to determine the SBH. The first method was the Juergen Werner method to evaluate the I-V characteristics. The calculated SBH of the diodes using this method was 1.41 - 0.20eV, 1.71 - 0.25eV and 1.75 - 0.28eV for the Gd-, Er- and Yb-doped diodes respectively. It was observed that using an ad-hoc effective Richardson constant value of 0.006Axcm-2xK-2 to calculate the SBH rendered results that were in no greater than 2 disagreement neglecting error with photoemission spectroscopy measurements performed on the same GaN thin films by a another researcher a year prior. The second method of measuring the SBH was the temperature dependent I-V-T measurements using the modified Norde function. The calculated SBH of the diodes were universally lower than the results of the Juergen Werner method. The SBH was 1.19 - 0.12eV, 1.39 - 0.16eV and 1.43- 0.12eV for the Gd-, Er- and Yb-doped diodes respectively. Additionally, the Norde method provided direct calculation of the effective Richardson constants, which were 0.011 - 0.001Axcm-2xK-2, 0.036 - 0.003Axcm-2xK-2 and 0.021 - 0.02Axcm-2xK-2 for the Gd-, Er- and Yb-doped diodes respectively. Both measurements in this study are in agreement with the earlier photoemission spectroscopy measurements with regard to the proportional differences among the different dopant types.
- Inorganic Chemistry
- Electrical and Electronic Equipment