Accession Number:

ADA582434

Title:

Characterization of Metal-Insulator-Transition (MIT) Phase Change Materials (PCM) for Reconfigurable Components, Circuits, and Systems

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

2013-03-01

Pagination or Media Count:

117.0

Abstract:

Many microelectromechanical systems MEMS use metal contact micro-switches as part of their reconfigurable device design. These devices utilize a mechanical component that can wear down and fail over time. Metal insulator transition MIT materials, also known as phase change materials PCMs, exhibit a reversible transition that can be used to replace the mechanical comp nent in reconfigurable devices. In the presence of a thermal or electric field stimuli, the PCMs will transition back and forth between a crystalline and amorphous state. During this transformation, the resistivity, reflectivity, and Youngs modulus of the material drastically change. This research effort focuses on characterizing the stimuli required to transition germanium telluride GeTe and vanadium oxide VOx. To do this, test structures were designed and microfabricated in AFITs class 1000 cleanroom. The resistivity of the GeTe films underwent a volatile transition from 1.4E3Ohm-cm down to 2.28Ohm-cm and a nonvolatile transition from 1.4E3Ohm-cm to 2.43E-3Ohm-cm when a thermal stimulus was applied. The reflectivity of the film also changed significantly when crystallized, increasing over 30. Lastly, the Youngs modulus was measured and showed a 28 change during crystallization. After the materials were characterized, reconfigurable devices were designed to utilize the phase change properties of the PCMs.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE