Accession Number:

ADA582198

Title:

Graphene-based Nanoelectronics

Descriptive Note:

Final rept. Oct 2011-Sep 2012

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Report Date:

2013-02-01

Pagination or Media Count:

72.0

Abstract:

Significant progress has been made in growing and characterizing graphene and fabricating and testing graphene-based devices. Growth parameters have been optimized for producing large area single- and bilayer graphene. These materials have been characterized using Raman spectroscopy methods developed in this program for determining layer number, stacking order, and defects in graphene. Device processing methods have also been developed, including atomic layer deposition of gate dielectrics with fabricated field-effect transistors FETs demonstrating 3-GHz threshold frequencies. A large measured device data set has been produced for circuit design and device modeling validation. Models have been developed to assist in the electrical characterization of the graphenesubstrate interface that takes into account interface defects. Graphene FETs will find applications in high frequency communication and radar systems. The U.S. Army Research Laboratory ARL has demonstrated inkjet printed flexible graphene supercapacitors with the Stevens Institute of Technology. ARL has also used unique high-speed supercapacitors developed by an ARL Small Business Innovation Research SBIR performer, JME Inc., to demonstrate energy storage for a munitions energy harvesting system under development by the Armament Research, Development and Engineering Center ARDEC. ARL developed supercapacitor technology will enable size, weight, shelf life, and reliability improvements for munitions electronic systems.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE