Accession Number:

ADA581737

Title:

Significantly Improved Minority Carrier Lifetime Observed in a Long-Wavelength Infrared III-V Type-II Superlattice Comprised of InAs/InAsSb

Descriptive Note:

Journal article

Corporate Author:

ILLINOIS UNIV AT URBANA-CHAMPAIGN

Report Date:

2011-12-22

Pagination or Media Count:

7.0

Abstract:

Time-resolved photoluminescence measurements reveal a minority carrier lifetime of greater than 412 ns at 77K under low excitation for a long-wavelength infrared InAsInAs0.72Sb0.28 type-II superlattice T2SL. This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAsGa1-xInxSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.

Subject Categories:

  • Inorganic Chemistry
  • Crystallography
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE