Accession Number:

ADA581552

Title:

Routes for Efficiency Improvement in III-V Photovoltaics

Descriptive Note:

Final rept. 1 Sep 2010-21 Aug 2011

Corporate Author:

CALIFORNIA INST OF TECH PASADENA

Personal Author(s):

• Atwater, Harry

Report Date:

2012-05-17

Pagination or Media Count:

12.0

Abstract:

Our efforts have successfully shown new technologies for increased efficiency of robust and durable thin film GaAs photovoltaic technology through enhanced light absorption and cell photocurrent as well as chemical cell edge passivation. We have shown that a combined dielectric-plasmonic grating structure can further improve the performance of solar cells by increasing absorption in thin film cells, leading to overall increases in shortcircuit current and better angular response. Additionally, we have identified a new compound for III-V semiconductor chemical edge passivation, trioctylphosphine sulfide TOPS, that both eliminates size-dependent losses from exposed sidewalls and dynamically passivates regions near damages and cracks. Through this work, we enabled progress towards thinner and more durable GaAs cells that still maintain their high efficiency.

Descriptors:

• *GALLIUM ARSENIDES
• *PHOTOELECTRIC CELLS(SEMICONDUCTOR)
• *THIN FILMS
• ABSORPTION
• ANTENNAS
• DIELECTRICS
• PLASMONS
• SOLAR CELLS

Subject Categories:

• Inorganic Chemistry
• Electrooptical and Optoelectronic Devices
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE