Routes for Efficiency Improvement in III-V Photovoltaics
Final rept. 1 Sep 2010-21 Aug 2011
CALIFORNIA INST OF TECH PASADENA
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Our efforts have successfully shown new technologies for increased efficiency of robust and durable thin film GaAs photovoltaic technology through enhanced light absorption and cell photocurrent as well as chemical cell edge passivation. We have shown that a combined dielectric-plasmonic grating structure can further improve the performance of solar cells by increasing absorption in thin film cells, leading to overall increases in shortcircuit current and better angular response. Additionally, we have identified a new compound for III-V semiconductor chemical edge passivation, trioctylphosphine sulfide TOPS, that both eliminates size-dependent losses from exposed sidewalls and dynamically passivates regions near damages and cracks. Through this work, we enabled progress towards thinner and more durable GaAs cells that still maintain their high efficiency.
- Inorganic Chemistry
- Electrooptical and Optoelectronic Devices
- Solid State Physics