Accession Number:

ADA576617

Title:

SET Characterization in Logic Gates Circuits Fabricated in a 3DIC Technology

Descriptive Note:

Journal article

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

• Gouker, Pascale M.
• Tyrrell, Brian
• Renzi, Matthew
• Chen, Chenson
• Wyatt, Peter
• Ahlbin, Jonathan R.
• Weeden-Wright, Stephanie
• Atkinson, Nick M.
• Gaspard, Nelson J.
• Bhuva, Bharat L.

Report Date:

2011-08-22

Pagination or Media Count:

9.0

Abstract:

Single event transients are characterized for the first time in logic gate circuits fabricated in a novel 3DIC technology where SET test circuits are vertically integrated on three tiers in a 20-micron-thick layer. This 3D technology is extremely well suited for high-density circuit integration because of the small dimension the tier-to-tier circuit interconnects, which are 1.25-micron-wide through-oxide-vias. Transients pulse width distributions were characterized simultaneously on each tier during exposure to krypton heavy ions. The difference in SET pulse width and cross-section between the three tiers is discussed. Experimental test results are explained by considering the electrical characteristics of the FETs on the 2D wafers before 3D integration, and by considering the energy deposited by the Kr ions passing through the various material layers of the 3DIC stack. We also show that the back metal layer available on the upper tiers can be used to tune independently the nFET and pFET current drive, and change the SET pulse width and cross-section. This 3DIC technology appears to be a good candidate for space applications.

Descriptors:

• *INTEGRATED CIRCUITS
• HEAVY IONS
• SILICON ON INSULATOR
• THREE DIMENSIONAL

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE