Radiation Tolerance Characterization of Dual Band InAs/GaSb Type-II Strain-Layer Superlattice pBp Detectors Using 63 MeV Protons
AIR FORCE RESEARCH LAB KIRTLAND AFB NM SPACE VEHICLES DIRECTORATE
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The radiation tolerance characterization of dual band InAsGaSb type-II strain-layer superlattice pBp detectors of varying size using 63 MeV proton irradiation is presented. The detectors mid-wave infrared performance degraded with increasing proton fluence PhiP up to 3.75 x 10exp 12sq cm or, equivalently, a total ionizing dose500 kRad Si. At this PhiP, an 31 drop in quantum efficiency g, 2 order increase in dark current density JD, and consequently, 1 order drop in calculated detectivity D were observed. Proton damage factors were determined for g and D. Arrhenius-analysis of temperature-dependent JD measurements reflected significant changes in the activation energies following irradiation.
- Infrared Detection and Detectors