Accession Number:

ADA574857

Title:

Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors

Descriptive Note:

Journal article

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

• Kim, J. O.
• Sengupta, S.
• Barve, A. V.
• Sharma, Y. D.
• Adhikary, S.
• Lee, S. J.
• Noh, S. K.
• Allen, M. S.
• Allen, J. W.
• Chakrabari, S.

Report Date:

2013-01-01

Pagination or Media Count:

6.0

Abstract:

We report on the design and performance of multi-stack InAsInGaAs sub-monolayer SML quantum dots QD based infrared photodetectors SML-QDIP. SML-QDIPs are grown with the number of stacks varied from 2 to 6. From detailed radiometric characterization, it is determined that the sample with 4 SML stacks has the best performance. The s-to-p sp polarized spectral response ratio of this device is measured to be 21.7, which is significantly higher than conventional Stranski-Krastanov quantum dots 13 and quantum wells 2.8. This result makes the SML-QDIP an attractive candidate in applications that require normal incidence.

Descriptors:

• *PHOTODETECTORS
• *QUANTUM DOTS
• INFRARED DETECTORS
• POLARIZATION
• QUANTUM WELLS
• REPRINTS

Subject Categories:

• Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE