Accession Number:

ADA574857

Title:

Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors

Descriptive Note:

Journal article

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Report Date:

2013-01-01

Pagination or Media Count:

6.0

Abstract:

We report on the design and performance of multi-stack InAsInGaAs sub-monolayer SML quantum dots QD based infrared photodetectors SML-QDIP. SML-QDIPs are grown with the number of stacks varied from 2 to 6. From detailed radiometric characterization, it is determined that the sample with 4 SML stacks has the best performance. The s-to-p sp polarized spectral response ratio of this device is measured to be 21.7, which is significantly higher than conventional Stranski-Krastanov quantum dots 13 and quantum wells 2.8. This result makes the SML-QDIP an attractive candidate in applications that require normal incidence.

Subject Categories:

  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE