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New Materials for Infrared Transmitting Electrooptic Filters

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Final technical rept. 1 May 1978-30 Jun 1980

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The primary objectives of this program were to infrared IR transmitting materials and provide new optic EO properties of those materials most likely cient an order of magnitude higher than those development for tunable filters. A higher EO an engineering margin on designs for increased voltage In addition, numerous applications can be envisioned for such materials in sensor and communication systes. Since tensor symmetry is the same as for the EO tensor, such a material is also likely to have excellent piezoelectric properties and thereby have many uses as an ultrasonic transducer. Many of the materials can also be used in devices requiring collinear acoustooptic effects. We have succeeded in identifying two new materials, CdIn2Te4 and , AgGaTe2 which have the potential of having an EO constant at least an order of magnitude higher than those of materials currently available for EO tunable filters. This project has also led to the development of sthesis techniques for materials preparation and crystal growth of binary and ternary chalcogenide materials. We have worked out a technique to widen the range of materials as far as resistivity is concerned for measurement of dielectric constant by the use of blocking contacts. Our predictions for new materials with high dielectric constants and hence the potential for high EO coefficients, based on structural analogs, were proven both by experiment and by the theoretical work of A. Yariv and C. Shih. In a parallel program, Shih and Yariv developed a technique for calculating EO coefficient based on the localized band charge model. Their results on binary compounds are in excellent agreement with experiment, and they calculated very high EO coefficients for the materials we predicted. We recommend the continuation of this type of materials study, specifically to obtain single-crystal samples large enough to m

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  • Electrooptical and Optoelectronic Devices

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