Demonstration of the First 9.2 kV 4H-SiC Bipolar Junction Transistor
RUTGERS - THE STATE UNIV PISCATAWAY NJ DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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This paper reports the first demonstration of a 9.2kV 4H-SiC bipolar junction transistor BJT based on a 50 micrometer, 7x1014cm-3 doped drift layer, achieving an emitter current density of 150Acm2 at VCEO5V. A much larger area BJT of identical wafer design with negligible current spreading effect would have an RSPON equal to 49mOmega-cm2 limited only by the specific resistance of the 50micrometer drift layer. A DC common emitter current gain of 7 is achieved.
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