InAs HEMT Narrowband Amplifier with Ultra-low Power Dissipation
NAVAL RESEARCH LAB WASHINGTON DC
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The design, fabrication and performance of a prototype narrowband amplifier using InAs-channel HEMTs are reported. The amplifier, which is realised on an RTDuroid circuit board with a combination of transmission lines and lumped components, is intended for a long-life battery-powered application. The two-stage amplifier has 20 dB of gain with a bandwidth of 4 in S-band and dissipates a total power of only 365 mW.
- Electrical and Electronic Equipment