Accession Number:

ADA574122

Title:

InAs HEMT Narrowband Amplifier with Ultra-low Power Dissipation

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2006-06-01

Pagination or Media Count:

3.0

Abstract:

The design, fabrication and performance of a prototype narrowband amplifier using InAs-channel HEMTs are reported. The amplifier, which is realised on an RTDuroid circuit board with a combination of transmission lines and lumped components, is intended for a long-life battery-powered application. The two-stage amplifier has 20 dB of gain with a bandwidth of 4 in S-band and dissipates a total power of only 365 mW.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE