Accession Number:

ADA574115

Title:

Adsorption of 1-Octanethiol on the GaN(0001) Surface

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Personal Author(s):

Report Date:

2003-04-01

Pagination or Media Count:

8.0

Abstract:

The chemisorption of 1-octanethiol CH3CH26CH2SH from the vapor phase on the GaN0001-1 x 1 surface has been studied using X-ray photoemission, ultraviolet photoemission, and X-ray-excited Auger electron spectroscopies. Quantitative analysis of relative peak intensities indicates that the molecule adsorbs via the thiol group with a saturation coverage of 0.28 monolayers and with the alkyl chain lying essentially parallel to the surface. Upon annealing, most of the alkyl C desorbs by 350 C, but most of the S remains. Little or no indication of X-ray-induced damage in the adsorbed thiol layer is seen during data collection.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE