Accession Number:

ADA574096

Title:

Growth and Characterization of Single Crystal Ga2O3 Nanowires and Nano-Ribbons for Sensing Applications

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2005-01-01

Pagination or Media Count:

11.0

Abstract:

The growth of monoclinic Ga2O3 nanowires, nano-ribbons and nano-sheets has been investigated. Results indicate that high quality single crystal nanowires can be grown at 900C using an Au catalyst, while single crystal nano-ribbons and nano-sheets require no metal catalyst for growth. Since bulk Ga2O3 is a promising material for high temperature sensing, Ga2O3 nanowires and nano-ribbons may prove to enhance the sensing capability due to the high surface area. We have investigated the nature of defects in this material using Electron Spin Resonance, in as grown material, as well as under annealing in a reducing gas H2 at various high temperatures. Results indicate the presence of an oxygen deficiency in the material, resulting in a conduction electron signal that becomes enhanced with annealing. An alternate use of these nanowires for sensing applications will also be presented, involving Surface Enhanced Raman Spectroscopy.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE