Accession Number:

ADA574015

Title:

Study of the Initial Nucleation and Growth of Catalyst-free InAs and Ge Nanowires

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Personal Author(s):

Report Date:

2007-05-01

Pagination or Media Count:

4.0

Abstract:

The authors have examined the nucleation conditions in the growth of catalyst-free InAs and Ge nanowires NWs on porous Si, as well as the growth of InAs NWs on a SiO2 substrate using 10 nm sized In nanoparticles. The NW growths were performed in a closed system. The results suggest that all the NWs grew from a solid nucleation state. For the growth using In nanoparticles, the results suggest that the growth mechanism is very different from the vapor-liquid-solid, in that the nanowire growth only begins after the nucleation particle solidifies.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE