Accession Number:

ADA574002

Title:

Narrow Band Gap InGaSb, InAlAsSb Alloys for Electronic Devices

Descriptive Note:

Journal article

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2006-05-01

Pagination or Media Count:

5.0

Abstract:

Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors HBTs. Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have been fabricated and show good rectification with ideality factors near one. In addition, several of these alloys have been used to make an n-p-n HBT that has demonstrated a dc current gain of 25.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE