Narrow Band Gap InGaSb, InAlAsSb Alloys for Electronic Devices
NAVAL RESEARCH LAB WASHINGTON DC
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Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors HBTs. Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have been fabricated and show good rectification with ideality factors near one. In addition, several of these alloys have been used to make an n-p-n HBT that has demonstrated a dc current gain of 25.
- Electrical and Electronic Equipment