Si-assisted Growth of InAs Nanowires
NAVAL RESEARCH LAB WASHINGTON DC
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The authors report on the growth of InAs nanowires using nanometer-sized Si clusters in a closed system without any metal catalyst. The growth was performed at 580 C for 30 min using 1.3 nm thickness of SiOx. It is suggested that the nanowire growth occurred due to highly reactive nanometer-sized Si clusters, which are formed by phase separation of SiOx. The authors have also examined the vapor-liquid-solid VLS mechanism under various oxidizing conditions, including different oxygen pressures 200 and 800 mTorr and oxidized Au In tip. The results indicate the inhibiting effect of oxygen on the VLS mechanism.
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