Accession Number:
ADA573951
Title:
A Method for Atomic Layer Deposition of Complex Oxide Thin Films
Descriptive Note:
Master's thesis
Corporate Author:
DREXEL UNIV PHILADELPHIA PA DEPT OF MATERIALS SCIENCE AND ENGINEERING
Personal Author(s):
Report Date:
2012-12-01
Pagination or Media Count:
106.0
Abstract:
Advanced technologies derive many of their capabilities from the advanced materials that they are made from. Complex oxides are a class of materials which are driving technological advancement in a host of different directions. These highly functional materials have a great variety of useful properties, which can be chosen and even engineered. Advanced materials require advanced deposition methods. Atomic layer deposition ALD, a variant of chemical vapor deposition CVD, is gaining more use in industry for its ability to provide ultra-high film thickness resolution down to 0.1 nm, capability to conformally coat three-dimensional structures, and its high uniformity across large surface areas. Additionally, ALD processes provide a possibility to improve economic and environmental viability of the process as compared to CVD by using and wasting less toxic reactants and expelling fewer nano-particulate byproducts. ALD processes are highly mature for many binary oxides commonly used in the semiconductor industries, however processes for depositing heavy metal oxides and complex oxides--oxides containing two or more separate metallic cations-- are sorely lacking in literature.
Descriptors:
- *ATOMIC LAYER EPITAXY
- *COMPLEX COMPOUNDS
- *OXIDES
- *THIN FILMS
- ANNEALING
- ATOMIC STRUCTURE
- BAND GAPS
- CHEMICAL VAPOR DEPOSITION
- DATA ACQUISITION
- DIFFERENTIAL SCANNING CALORIMETRY
- FERROELECTRICITY
- LEAD TITANATES
- ORGANOMETALLIC COMPOUNDS
- OXIDIZERS
- PHOTONS
- SOL GEL PROCESSES
- TEMPERATURE
- THERMAL ANALYSIS
- THERMOGRAVIMETRIC ANALYSIS
- X RAY DIFFRACTION
- X RAY SPECTROSCOPY
Subject Categories:
- Inorganic Chemistry
- Electrical and Electronic Equipment
- Crystallography
- Solid State Physics