Accession Number:

ADA573951

Title:

A Method for Atomic Layer Deposition of Complex Oxide Thin Films

Descriptive Note:

Master's thesis

Corporate Author:

DREXEL UNIV PHILADELPHIA PA DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s):

Report Date:

2012-12-01

Pagination or Media Count:

106.0

Abstract:

Advanced technologies derive many of their capabilities from the advanced materials that they are made from. Complex oxides are a class of materials which are driving technological advancement in a host of different directions. These highly functional materials have a great variety of useful properties, which can be chosen and even engineered. Advanced materials require advanced deposition methods. Atomic layer deposition ALD, a variant of chemical vapor deposition CVD, is gaining more use in industry for its ability to provide ultra-high film thickness resolution down to 0.1 nm, capability to conformally coat three-dimensional structures, and its high uniformity across large surface areas. Additionally, ALD processes provide a possibility to improve economic and environmental viability of the process as compared to CVD by using and wasting less toxic reactants and expelling fewer nano-particulate byproducts. ALD processes are highly mature for many binary oxides commonly used in the semiconductor industries, however processes for depositing heavy metal oxides and complex oxides--oxides containing two or more separate metallic cations-- are sorely lacking in literature.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE