Accession Number:

ADA573445

Title:

Development of Advanced Ill-Nitride Materials

Descriptive Note:

Progress rept.

Corporate Author:

CALIFORNIA UNIV SANTA BARBARA DEPT OF MATERIALS

Personal Author(s):

Report Date:

2008-09-24

Pagination or Media Count:

15.0

Abstract:

This new AFOSR program is focused on basic issues in the growth of advanced GaN and InN-based materials by molecular beam epitaxy MBE. Work is focused on three areas i extend on our pioneering work on high temperature nitrogen-rich growth of GaN, where we have demonstrated a new growth space for realizing high quality GaN materials and devices including world record room bulk electron mobility in GaN by MOCVD or MBE ii continue our work on InN and its alloys with a particular emphasis on realizing p-type doping, p-n junctions, and InGaNInN quantum well structures for terahertz emitters and iii develop AlInN materials lattice-matched to GaN for advanced optoelectronic emitters and electron devices.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE