Accession Number:

ADA571896

Title:

Sulfur Implanted Black Silicon for Metal Semiconductor Metal (MSM) Photodetectors

Descriptive Note:

Final rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Report Date:

2012-12-01

Pagination or Media Count:

18.0

Abstract:

We have investigated a wet chemical process for nanoscale texturing of sulfur-doped silicon Si surfaces, which results in substantial suppression of the reflectivity in a broad spectral range, leading to black Si surfaces. The blackened surface was characterized optically and with Veeco micro-profiler. We fabricated metal semiconductor metal MSM test devices using the aforementioned black silicon and electrically characterized them for current-voltage I-V, optical response, zero biased quantum efficiency QE, and optical responsivity. We observe increased optical response and responsivity for the blackened silicon. One key observation we have made is the extension of the detectivity up to 1.2 956m, which is beyond 1.1 956m for a typical silicon detector. This observation was made under zero bias to the detector We conclude that anneling and metal enhanced chemical etching MECE treatment prior to fabrication of the devices have enhanced the detectivity of the devices beyond the typical bandgap of 1.1 956m of silicon

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE