Accession Number:

ADA571868

Title:

Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene

Descriptive Note:

Journal article

Corporate Author:

CALIFORNIA UNIV BERKELEY DEPT OF PHYSICS

Report Date:

2011-06-13

Pagination or Media Count:

4.0

Abstract:

Chemical vapor deposited CVD graphene is often presented as a scalable solution to graphene device fabrication, but to date such graphene has exhibited lower mobility than that produced by exfoliation. Using a boron nitride underlayer, we achieve mobilities as high as 37 000 cmexpn 20 V s, an order of magnitude higher than commonly reported for CVD graphene and better than most exfoliated graphene. This result demonstrates that the barrier to scalable, high mobility CVD graphene is not the growth technique but rather the choice of a substrate that minimizes carrier scattering.

Subject Categories:

  • Industrial Chemistry and Chemical Processing
  • Inorganic Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE