Lifetime Measurement of HgCdTe Semiconductor Material
ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE
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Mercury cadmium telluride HgCdTe is a semiconductor used for detecting infrared radiation. An important method for electrical characterization of HgCdTe is the measurement of minority carrier lifetime using the photoconductive decay method. This experiment was conducted to analyze the minority carrier lifetime of passivated and unpassivated samples of HgCdTe. The lifetimes of the two samples of HgCdTe were measured using a pulse generator, an auto tuning temperature controller, acryostat, a laser, an oscilloscope, and a computer. The lifetime was measured from 80 K to 300 K. A longer lifetime of minority carriers in HgCdTe is desirable for sensing applications.
- Inorganic Chemistry
- Electrical and Electronic Equipment