Accession Number:

ADA571227

Title:

Lifetime Measurement of HgCdTe Semiconductor Material

Descriptive Note:

Final rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Personal Author(s):

Report Date:

2012-03-01

Pagination or Media Count:

18.0

Abstract:

Mercury cadmium telluride HgCdTe is a semiconductor used for detecting infrared radiation. An important method for electrical characterization of HgCdTe is the measurement of minority carrier lifetime using the photoconductive decay method. This experiment was conducted to analyze the minority carrier lifetime of passivated and unpassivated samples of HgCdTe. The lifetimes of the two samples of HgCdTe were measured using a pulse generator, an auto tuning temperature controller, acryostat, a laser, an oscilloscope, and a computer. The lifetime was measured from 80 K to 300 K. A longer lifetime of minority carriers in HgCdTe is desirable for sensing applications.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE