Process Dependence of H Passivation and Doping in H-implanted ZnO
AIR FORCE RESEARCH LAB WRIGHT-PATTERSON AFB OH SENSORS DIR
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We used depth-resolved cathodoluminescence spectroscopy DRCLS, photoluminescence PL spectroscopy and temperature-dependent Hall-effect TDHE measurements to describe the strong dependence of H passivation and doping in H-implanted ZnO on thermal treatment. Increasing H implantation dose increases passivation of Zn and oxygen vacancy-related defects, while reducing deep level emissions. Over annealing temperatures of 100-400 deg C at different times, 1 h annealing at 200 deg C yielded the lowest DRCLS deep level emissions highest TDHE carrier mobility, and highest near band-edge PL emission. These results describe the systematics of dopant implantation and thermal activation on H incorporation in ZnO and their effects on its electrical properties.
- Electricity and Magnetism