Accession Number:

ADA568752

Title:

Fabrication and Characterization of Compact Silicon Oxynitride Waveguides on Silicon Chips

Descriptive Note:

Journal article

Corporate Author:

RUTGERS - THE STATE UNIV PISCATAWAY NJ DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Report Date:

2012-01-01

Pagination or Media Count:

7.0

Abstract:

We investigate silicon oxynitride SiON waveguides for long optical delay lines on a silicon chip. With the choice of a moderately low refractive index contrast, a balance can be achieved between compact waveguide cross-section and low loss. The material composition and refractive index are characterized by Rutherford backscattering spectrometry and ellipsometry. High-temperature annealing is performed after waveguide fabrication so as to simultaneously remove light absorbing bonds in the materials and smooth the sidewall roughness at the corecladding interface. A meter-long SiON waveguide is demonstrated on a centimeter scale chip.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE