MCT Detectors and ROICS for Various Format MWIR and LWIR Arrays
UKRAINIAN ACADEMY OF SCIENCES KIEV INST OF SEMICONDUCTOR PHYSICS
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Silicon ROICs for MCT LWIR 4x288, 6x576 and MWIR 128x128 diode matrix arrays were designed, manufactured and tested. MCT layers were grown by MBE technology on 013 GaAs substrates with CdTeZnTe buffer layers lambda co 11.2 or - 0.15 microns at T 78 K and by LPE technology on 111 CdZnTe substrates with HWE passivation layer. The mean detectivity obtained e.g. for 4 x 288 FPAs at T 78 K and background temperature Tb 295 K was Dlambda approx. 1.8 x 10exp 11 cmHzexp 12W with st. dev. of approx. 16.5 at FOV 32 deg and NEDT 9.0 mK for the arrays tested and are close to the BLIP regime. NEDT measured for 128x128 FPA was about 20 or - 8 mK.
- Infrared Detection and Detectors