Accession Number:

ADA568576

Title:

Development of Silicon-Based Group IV Lasers

Descriptive Note:

Annual rept. 22 Aug 201-22 Aug 2012

Corporate Author:

NATIONAL TAIWAN UNIV TAIPEI GRADUATE INST OF ELECTRONICS ENGINEERING

Personal Author(s):

Report Date:

2012-08-17

Pagination or Media Count:

4.0

Abstract:

The objective of the project is to develop silicon-based group IV heterostructure lasers by the incorporation of another group IV element of Sn. The researchers have made significant progress toward the milestones described in the proposal. Optical emitters made of P-i-N diode with direct bandgap were fabricated. The structure has been characterized by various measurements to establish that emitting layer is direct bandgap. They are forwarding herewith the detection of emission on the device, if this is realized, then they could have a breakthrough on Si-based optical emitter.

Subject Categories:

  • Lasers and Masers
  • Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE