Accession Number:

ADA566074

Title:

Rare Earth 4f Hybridization with the GaN Valence Band

Descriptive Note:

Journal article

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH

Personal Author(s):

• Wang, Lu
• Mei, Wai-Ning
• McHale, S. R.
• McClory, J. W.
• Petrosky, J. C.
• Wu, J.
• Palai, R.
• Losovyj, Y. B.
• Dowben, P. A.

Report Date:

2012-01-01

Pagination or Media Count:

9.0

Abstract:

The placement of the Gd, Er and Yb 4f states within the GaN valence band has been explored by both experiment and theory. The 4d-4f photoemission resonances for various rare-earthRE-doped GaN thin films RE Gd, Er, Yb provide an accurate depiction of the occupied 4f state placement within the GaN. The resonant photoemission show that the major Er and Gd RE 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other RE-doped semiconductors. For Yb, there is a very little resonant enhancement of the valence band of Yb-doped GaN, consistent with a large 4fexp 14-delta occupancy. The placement of the RE 4f levels is in qualitative agreement with theoretical expectations.

Descriptors:

• *GALLIUM NITRIDES
• *PHOTOELECTRIC EMISSION
• *RARE EARTH COMPOUNDS
• *VALENCE BANDS
• EMPLACEMENT
• GD AGENT
• HYBRIDIZATION
• RARE EARTH ELEMENTS
• RESONANCE
• THIN FILMS

Subject Categories:

• Inorganic Chemistry
• Electrooptical and Optoelectronic Devices
• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE