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Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing
Annual rept. 19 Jul 2011-18 Jul 2012
TEXAS UNIV AT DALLAS
Pagination or Media Count:
This is the first annual report on in-situ studies conducted of atomic layer deposition ALD of Al2O3 on GaN and Al0.25Ga0.75N AlGaN substrates. For GaN substrates, it was found that O3 exposure at 400 degree C results in adequate functionalization of the GaN surface to enable subsequent ALD growth of Al2O3 in a much shorter incubation period relative to a HF-treated GaN surface, and the O3 exposure also results in detectable N-O bonding. In contrast to III-arsenide-based substrates, no detectable Ga-oxide reduction clean-up effect was observed for the GaN surface.
APPROVED FOR PUBLIC RELEASE