Accession Number:

ADA564724

Title:

Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing

Descriptive Note:

Annual rept. 19 Jul 2011-18 Jul 2012

Corporate Author:

TEXAS UNIV AT DALLAS

Personal Author(s):

• Wallace, Robert M.

Report Date:

2012-07-18

Pagination or Media Count:

9.0

Abstract:

This is the first annual report on in-situ studies conducted of atomic layer deposition ALD of Al2O3 on GaN and Al0.25Ga0.75N AlGaN substrates. For GaN substrates, it was found that O3 exposure at 400 degree C results in adequate functionalization of the GaN surface to enable subsequent ALD growth of Al2O3 in a much shorter incubation period relative to a HF-treated GaN surface, and the O3 exposure also results in detectable N-O bonding. In contrast to III-arsenide-based substrates, no detectable Ga-oxide reduction clean-up effect was observed for the GaN surface.

Descriptors:

• *CHIPS(ELECTRONICS)
• *FABRICATION
• *GATES(CIRCUITS)
• ALUMINUM GALLIUM NITRIDES
• ALUMINUM OXIDES
• ANNEALING
• ATOMIC LAYER EPITAXY
• EFFICIENCY
• FIELD EFFECT TRANSISTORS
• GALLIUM NITRIDES
• HIGH ELECTRON MOBILITY TRANSISTORS
• METAL OXIDE SEMICONDUCTORS
• NANOTECHNOLOGY
• SILICON
• SUBSTRATES
• SURFACE CHEMISTRY

Subject Categories:

• Physical Chemistry
• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE