Accession Number:

ADA562425

Title:

Modeling SiO2 Ion Impurities Aging in Insulated Gate Power Devices Under Temperature and Voltage Stress

Descriptive Note:

Conference paper

Corporate Author:

IMPACT TECHNOLOGIES LLC ROCHESTER NY

Personal Author(s):

• Ginart, Antonio E.
• Ali, Irfan N.
• Celaya, Jose R.
• Kalgren, Patrick W.
• Poll, Scott D.
• Roemer, Michael J.

Report Date:

2010-10-01

Pagination or Media Count:

11.0

Abstract:

This paper presents a formal computational methodology to explain how the oxide in semiconductors degrades over time and the dependence of oxide degradation on voltage and temperature stresses. The effects of aging are modeled and quantified by modification of the gate-source capacitance value. The model output is validated using experimental results of a thermally aged power semiconductor device.

Descriptors:

• *SEMICONDUCTOR DEVICES
• AGING(MATERIALS)
• SILICON DIOXIDE
• STRESSES
• SYMPOSIA
• TEMPERATURE
• VOLTAGE

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE