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High Performance Crystalline Organic Transistors and Circuit
Final rept. 15 Jul 2007-14 Jul 2009
TEXAS UNIV AT AUSTIN
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We have examined the best available small molecule crystalline organic semiconductors as active layers in thin-film transistors. We have optimized the field-induced conductance, a figure of merit that will relate directly to circuit speeds. A simple figure of merit the product of the field-effect mobility and effective relative dielectric constant of the gate insulator or mobility times the product of capacitance per unit area and total insulatorthickness for bilayershas been used to compare our devices with all the published work in the literature up until the project ending. The best semiconductor-insulator combination was found to a porphryn semiconductor in conjunction with a bilayer gate insulator consisting of 100 nm Ta2O3 and 2.3 nm SiO2. We also discuss the physics of charge trapping at various semiconductor-dielectric interfaces.
APPROVED FOR PUBLIC RELEASE