Accession Number:

ADA558773

Title:

Development of Direct Band Gap Group IV Semiconductors with the Incorporation of Sn

Descriptive Note:

Final rept. 18 Apr 2011-17 Apr 2012

Corporate Author:

NATIONAL TAIWAN UNIV TAIPEI CENTER FOR CONDENSED MATTER SCIENCES

Personal Author(s):

Report Date:

2012-03-01

Pagination or Media Count:

7.0

Abstract:

Due to the indirect energy band of group IV materials of Si and Ge, these materials and their alloys cant be used to make optical devices. In this project, direct bandgap group IV alloy of GeSn alloy was developed. This report covers a growth techniques of GeSn alloy with various Sn compositions, b characterization of the alloy, and c physical properties of the alloy and identification of direct optical transitions.

Subject Categories:

  • Properties of Metals and Alloys
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE