Reverse Gate Bias-Induced Degradation of AlGaN/GaN High Electron Mobility Transistors
FLORIDA UNIV GAINESVILLE DEPT OF MATERIALS SCIENCE AND ENGINEERING
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A threshold reverse bias of 21 V was observed leading to a sharp increase in the gate current of AlGaNGaN high electron mobility transistors biased at low source-drain voltage 5 V. The gate current increases by one to two orders of magnitude at this bias, corresponding to an electric field strength around 1.8 MV cm 1. The gate current increased by roughly five orders of magnitude after step-stressing the gate bias from 10 to 42 V in 1 V increments for 1 min at each bias. The drain current was also decreased by 20 after this step-stress cycle. The photoluminescence and electroluminescence intensity from the semiconductor is decreased along the periphery of the gate region after stressing and transmission electron microscopy shows a thin native oxide layer under the gate and this disappears as the gate metal reacts with the underlying AlGaN.
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