Temperature Dependence of GaN HEMT Small Signal Parameters
ARMY RESEARCH LAB ADELPHI MD
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This study presents the temperature dependence of small signal parameters of GaNSiC HEMTs across the 0-150 deg C range. The changes with temperature for transconductance gm, output impedance Cds and Rds, feedback capacitance Cdg, input capacitance Cgs, and gate resistance Rg are measured. The variations with temperature are established for gm, Cds, Rds, Cdg, Cgs, and Rg in the GaN technology. This information is useful for MMIC designs.
- Electrical and Electronic Equipment
- Electricity and Magnetism