11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode
NORTHROP GRUMMAN CORP LINTHICUM HEIGHTS MD ELECTRONIC SENSORS AND SYSTEMS DIV
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To meet the large current handling requirements of modern power conditioning systems, paralleling of a large number of devices is required. This increases cost and complexity through dicing, soldering, and forming multiple wire bonds. Furthermore, paralleling discrete devices increases package volumeweight and reduces power density. To overcome these complexities, PiN diodes were designed, fabricated at high yields, tested, and interconnected on a three-inch 4H-SiC wafer to form an 11.72 cm2 active area wafer-scale diode. The wafer-scale diode exhibited a breakdown voltage of 1790 V at an extremely low leakage current density of less than 0.002 mAcm2. Under pulsed conditions, the peak current through the wafer-scale diode was 64.3 kA with a forward voltage drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2-s. Preliminary development of high voltage interconnection has produced quarter wafer interconnected PiN diodes with active areas of 2.2 cm2 and 3.1 cm2, exhibiting breakdown voltages of 4.5 kV and 4.0 kV, respectively.
- Inorganic Chemistry
- Electrical and Electronic Equipment