Accession Number:

ADA555996

Title:

Spin-Torque Microwave Detectors

Descriptive Note:

Technical rept.

Corporate Author:

OAKLAND UNIV ROCHESTER MI DEPT OF PHYSICS

Report Date:

2012-02-06

Pagination or Media Count:

24.0

Abstract:

It is known that the spin-transfer torque STT effect provides a new method of manipulation of magnetization in nano-scale objects. According to the STT effect bias DC current traversing magnetic multilayers can transfer angular magnetic moments from one layer to another, which can give rise to the micro-wave dynamics of magnetization in the layer. However, it is clear that an inverse effect is also possible. This inverse effect leads to the so-called spin-torque diode effect, first originally observed experimentally in 2005. The spin torque diode effect is a rectification effect of the input microwave current in a magnetoresistive junction. In this case, the resonance oscillations of the junction resistance can mix with the oscillations of the input microwave current and produce a large enough output DC voltage across the junction. The devices, which utilize this effect, are called the spin-torque microwave detectors STMD. In this chapter we review the general properties of STMDs and consider the performance of a STMD in two dif-ferent dynamic regimes of detector operation in the well-known traditional in-plane regime of STMD operation and in the recently discovered novel out-of-plane regime of STMD operation. We analyze the performance of a STMD and consider the typical applications for such detectors in both regimes.

Subject Categories:

  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE