Diode-Pumped, 2-Micron, Q-Switched Thulium: Y3Al5O12 (Tm:Yag) Microchip Laser
Interim rept. 17 Jun 2008-7 May 2011
DAYTON UNIV OH
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In this report we discuss the design, simulation, construction, and characterization of an actively Q-switched, diodepumped solid state laser operating at 2 micrometer. The laser cavity has a microchip configuration and uses a 6 thuliumdoped YAG crystal as the lasing medium. In continuous wave mode, we achieve output powers of up to 450 mW with a slope efficiency of 9.5. Using an acousto-optic Q-switch, the laser was run in pulsed mode at an average power of 42 mW and a pulse rate of 1.66 kHz. Pulse duration was approximately 400 ns with a pulse energy of 25 muJ. The center wavelength was 2.019 micrometer with a line width of -0.045 nm. Additionally, a design is presented for replacing the active Q-switch with a chromium-doped zinc selenide crystal acting as a saturable absorber passive Q-switch. Finally, we will propose possible future modifications to the laser system design to improve its performance, ruggedness and compactness, and to broaden its functionality.
- Lasers and Masers