Accession Number:

ADA551775

Title:

System Tests of Optimized (2nd Pass) Gallium Arsenide (GaAs) Integrated Circuit Radio Frequency (RF) Booster Designs for 425 MHz and Dual Band (425 and 900 MHz)

Descriptive Note:

Final rept.

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD SENSORS AND ELECTRON DEVICES DIRECTORATE

Personal Author(s):

Report Date:

2011-09-01

Pagination or Media Count:

58.0

Abstract:

High-performance microwave and radio frequency integrated circuits are of interest to the Army. The radio frequency RF integrated circuit RFIC booster chip is intended to increase range between RF nodes for low-power wireless applications. The booster concept uses the excellent RF performance advantages of gallium arsenide GaAs and is easily inserted into systems based on commercial silicon Si RFIC transceivers to enhance their capabilities and improve size, weight, and power SWAP. This report documents these system-level tests showing the performance enhancements possible by combining a simple custom GaAs RFIC design with wireless systems based on commercial-off-the-shelf COTS transceivers.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE